- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
An Oxygen Vacancy Memristor Ruled by Electron Correlations ; day:28 ; month:07 ; year:2022 ; extent:10
Advanced science ; (28.07.2022) (gesamt 10)
- Creator
-
Humbert, Vincent
El Hage, Ralph
Krieger, Guillaume
Sanchez‐Santolino, Gabriel
Sander, Anke
Collin, Sophie
Trastoy, Juan
Briatico, Javier
Santamaria, Jacobo
Preziosi, Daniele
Villegas, Javier E.
- DOI
-
10.1002/advs.202201753
- URN
-
urn:nbn:de:101:1-2022072915135765731569
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:25 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Humbert, Vincent
- El Hage, Ralph
- Krieger, Guillaume
- Sanchez‐Santolino, Gabriel
- Sander, Anke
- Collin, Sophie
- Trastoy, Juan
- Briatico, Javier
- Santamaria, Jacobo
- Preziosi, Daniele
- Villegas, Javier E.
Other Objects (12)
Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics
Mimicking Neurotransmitter Release and Long‐Term Plasticity by Oxygen Vacancy Migration in a Tunnel Junction Memristor
Oxygen vacancy associated single-electron transfer for photofixation of CO2 to long-chain chemicals
Kinetic Monte Carlo simulation of simultaneous electron and oxygen vacancy movement in ferroelectric HfO2
Overview of emerging memristor families from resistive memristor to spintronic memristor
Guided anisotropic oxygen transport in vacancy ordered oxides
Direct observation of oxygen-vacancy formation and structural changes in Bi2WO6 nanoflakes induced by electron irradiation
Capturing Electron-Electron Electron-Ion Correlations in Strong Fields
Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM
High oxygen-vacancy diffusivity predicted for perovskite oxide Ca0.5Sr0.5Co0.8Fe0.2O2.5
Ferroelectrics with a controlled oxygen-vacancy distribution by design
Critical ionic transport across an oxygen-vacancy ordering transition
Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics
Mimicking Neurotransmitter Release and Long‐Term Plasticity by Oxygen Vacancy Migration in a Tunnel Junction Memristor
Oxygen vacancy associated single-electron transfer for photofixation of CO2 to long-chain chemicals
Kinetic Monte Carlo simulation of simultaneous electron and oxygen vacancy movement in ferroelectric HfO2
Overview of emerging memristor families from resistive memristor to spintronic memristor
Guided anisotropic oxygen transport in vacancy ordered oxides
Direct observation of oxygen-vacancy formation and structural changes in Bi2WO6 nanoflakes induced by electron irradiation
Capturing Electron-Electron Electron-Ion Correlations in Strong Fields
Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM
High oxygen-vacancy diffusivity predicted for perovskite oxide Ca0.5Sr0.5Co0.8Fe0.2O2.5
Ferroelectrics with a controlled oxygen-vacancy distribution by design
Critical ionic transport across an oxygen-vacancy ordering transition
Effect of oxygen vacancy and Si doping on the electrical properties of Ta2O5 in memristor characteristics
Mimicking Neurotransmitter Release and Long‐Term Plasticity by Oxygen Vacancy Migration in a Tunnel Junction Memristor
Oxygen vacancy associated single-electron transfer for photofixation of CO2 to long-chain chemicals
Kinetic Monte Carlo simulation of simultaneous electron and oxygen vacancy movement in ferroelectric HfO2
Overview of emerging memristor families from resistive memristor to spintronic memristor
Guided anisotropic oxygen transport in vacancy ordered oxides
Direct observation of oxygen-vacancy formation and structural changes in Bi2WO6 nanoflakes induced by electron irradiation
Capturing Electron-Electron Electron-Ion Correlations in Strong Fields
Analysis of oxygen vacancy in Co-doped ZnO using the electron density distribution obtained using MEM
High oxygen-vacancy diffusivity predicted for perovskite oxide Ca0.5Sr0.5Co0.8Fe0.2O2.5
Ferroelectrics with a controlled oxygen-vacancy distribution by design