Study of GHz-burst femtosecond laser micro-punching of 4H-SiC wafers
Abstract: The micromachining of silicon carbide using femtosecond laser pulses is becoming an im-
portant field of research. High-repetition-rate sub-pulse trains, so-called pulse bursts, are a particularly
promising route towards completely new process regimes. We report on the results of micro-punching
n-type 4H-silicon carbide wafers using GHz pulse burst in order to systematically investigate the influ-
ence of the temporal energy distribution on laser processing. Pulse-burst experiments are performed at
a laser wavelength of λ = 1030 nm using a single GHz burst containing a varying number of pulses and
then compared with standard single femtosecond pulse exposures. The pulse energy is swept across
the ablation threshold. For each set of parameters, the micromachining efficiency is evaluated in terms
of ablation efficiency and burr characteristics. Scanning electron micrographs provide qualitative in-
formation about the machining quality. The characteristics of the laser modification are discussed in
relation to an increase in the number of pulses in a burst envelope and to an increase in pulse energy.
We observe that, compared to a single pulse, a GHz burst comprised of 10 lower-energy pulses leads
to an increase in the ablation rate by a factor of ≤ 10
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Solid state phenomena. - 344 (2023) , 29-33, ISSN: 1662-9779
- Event
-
Veröffentlichung
- (where)
-
Freiburg
- (who)
-
Universität
- (when)
-
2024
- Creator
- DOI
-
10.4028/p-q6725d
- URN
-
urn:nbn:de:bsz:25-freidok-2547766
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:25 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Mir, Hanan
- Meyer, Fabian
- Brand, Andreas
- Erath-Dulitz, Katrin
- Nekarda, Jan Frederik
- Universität
Time of origin
- 2024
Other Objects (12)
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Bi-stability in femtosecond laser ablation by MHz bursts
Passively mode-locked 10 GHz femtosecond Ti:sapphire laser
Stealth dicing of sapphire wafers with near infra-red femtosecond pulses
Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation
4-Tor-Netzwerkanalyse und On-Wafer-Messtechnik zur Bestimmung modaler Streuparameter bis 50 GHz
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
1-GHz-repetition-rate femtosecond optical parametric oscillator
Evolution of lattice distortions in 4H-SiC wafers with varying doping
On-wafer-S-Parameter-Meßsystem von 70 bis 230 GHz
Bi-stability in femtosecond laser ablation by MHz bursts
Passively mode-locked 10 GHz femtosecond Ti:sapphire laser
Stealth dicing of sapphire wafers with near infra-red femtosecond pulses
Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation
4-Tor-Netzwerkanalyse und On-Wafer-Messtechnik zur Bestimmung modaler Streuparameter bis 50 GHz
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
1-GHz-repetition-rate femtosecond optical parametric oscillator
Evolution of lattice distortions in 4H-SiC wafers with varying doping
On-wafer-S-Parameter-Meßsystem von 70 bis 230 GHz
Bi-stability in femtosecond laser ablation by MHz bursts
Passively mode-locked 10 GHz femtosecond Ti:sapphire laser
Stealth dicing of sapphire wafers with near infra-red femtosecond pulses
Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology
Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers
Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation