Evolution of lattice distortions in 4H-SiC wafers with varying doping

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Evolution of lattice distortions in 4H-SiC wafers with varying doping ; volume:10 ; number:1 ; day:2 ; month:7 ; year:2020 ; pages:1-9 ; date:12.2020
Scientific reports ; 10, Heft 1 (2.7.2020), 1-9, 12.2020

Creator: Mahadik, Nadeemullah A.
Das, Hrishikesh
Stoupin, Stanislav
Stahlbush, Robert E.
Bonanno, Peter L.
Xu, Xueping
Rengarajan, Varatharajan
Ruland, Gary E.

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41598-020-67900-y

URN: urn:nbn:de:101:1-2022100722401227107093

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:28 AM CEST

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Associated

Mahadik, Nadeemullah A.
Das, Hrishikesh
Stoupin, Stanislav
Stahlbush, Robert E.
Bonanno, Peter L.
Xu, Xueping
Rengarajan, Varatharajan
Ruland, Gary E.
SpringerLink (Online service)

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Evolution of lattice distortions in 4H-SiC wafers with varying doping

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Other Objects (12)

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