Large‐Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging

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Abstract: Point defects play a crucial role in determining the properties of atomically thin semiconductors. This work demonstrates the controlled formation of different types of defects and their comprehensive optical characterization using hyperspectral line imaging (HSLI). Distinct optical responses are observed in monolayer semiconductors grown under different stoichiometries using metal‐organic chemical vapor deposition. HSLI enables the simultaneous measurement of 400 spectra, allowing for statistical analysis of optical signatures at close to a centimeter scale. The study discovers that chalcogen‐rich samples exhibit remarkable optical uniformity due to reduced precursor accumulation compared to the metal‐rich case. The utilization of HSLI as a facile and reliable characterization tool pushes the boundaries of potential applications for atomically thin semiconductors in future devices.

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch

Erschienen in
Large‐Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging ; day:14 ; month:06 ; year:2024 ; extent:9
Small ; (14.06.2024) (gesamt 9)

Urheber
Lim, Seungjae
Kim, Tae Wan
Park, Taejoon
Heo, Yoon Seong
Yang, Seonguk
Seo, Hosung
Suh, Joonki
Lee, Jae‐Ung

DOI
10.1002/smll.202400737
URN
urn:nbn:de:101:1-2406141431359.560800786140
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
14.08.2025, 10:52 MESZ

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Beteiligte

  • Lim, Seungjae
  • Kim, Tae Wan
  • Park, Taejoon
  • Heo, Yoon Seong
  • Yang, Seonguk
  • Seo, Hosung
  • Suh, Joonki
  • Lee, Jae‐Ung

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