Wearable Sensors Based on Atomically Thin P‐Type Semiconductors
Abstract: 2D materials have exceptional physical and chemical characteristics, which makes them attractive for wearable technology. These characteristics include high carrier mobility, outstanding mechanical performance, abundant chemistry, and excellent electrostatic tunability. However, due to the high electron doping effect of interfacial charge impurities and intrinsic defects, most reported 2D materials are n‐type. Complementary electronic devices and high‐performance wearable sensors necessitate the development of p‐type 2D semiconductors, which have superior electrocatalytic performance in oxidative processes compared to their n‐type counterparts. This review paper thoroughly accounts for recent advancements in 2D p‐type semiconductor‐based wearable sensors, covering basic understandings, synthesis and fabrication, functional devices, and sensor performance insights. Finally, challenges and future opportunities for 2D p‐type semiconductor‐based wearable sensors are discussed.
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Wearable Sensors Based on Atomically Thin P‐Type Semiconductors ; day:26 ; month:07 ; year:2023 ; extent:23
Advanced Materials Technologies ; (26.07.2023) (gesamt 23)
- Urheber
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Jiang, Jing
Zhang, Ruifang
Wu, Wenzhuo
- DOI
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10.1002/admt.202300517
- URN
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urn:nbn:de:101:1-2023072715163084528453
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 14.08.2025, 10:45 MESZ
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Beteiligte
- Jiang, Jing
- Zhang, Ruifang
- Wu, Wenzhuo
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