Impact of postplating annealing on defect activation in boron-doped PERC solar cells

Abstract: In this article, the impact of postplating annealing on the regenerated state of boron-doped p-type passivated emitter and rear cell (PERC) solar cells with plated Ni/Cu/Ag front-side contacts is characterized. The assessment of different plating annealing profiles in the temperature range of 200-300 °C and their impact on light-induced degradation as well as on additional defects are realized by lifetime measurements of nonmetallized solar cell precursors before and after annealing. An observed lifetime degradation indicates that the current process sequence might facilitate bulk defect activation. An alternative process sequence is tested and promising results are presented

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch
Notes
IEEE journal of photovoltaics. - 10, 2 (2020) , 444-448, ISSN: 2156-3403

Classification
Elektrotechnik, Elektronik

Event
Veröffentlichung
(where)
Freiburg
(who)
Universität
(when)
2023
Creator
Grübel, Benjamin
Theil, Georg Christopher
Roder, Sebastian
Niewelt, Tim
Kluska, Sven

DOI
10.1109/jphotov.2020.2968110
URN
urn:nbn:de:bsz:25-freidok-2341059
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
25.03.2025, 1:48 PM CET

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Associated

Time of origin

  • 2023

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