Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource, 1 online resource.
- Language
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Englisch
- Bibliographic citation
-
Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing ; volume:18 ; number:1 ; day:9 ; month:3 ; year:2023 ; pages:1-49 ; date:12.2023
Discover nano ; 18, Heft 1 (9.3.2023), 1-49, 12.2023
- Classification
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Elektrotechnik, Elektronik
- Creator
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Zahoor, Furqan
Hussin, Fawnizu Azmadi
Isyaku, Usman Bature
Gupta, Shagun
Khanday, Farooq Ahmad
Chattopadhyay, Anupam
Abbas, Haider
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-023-03775-y
- URN
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urn:nbn:de:101:1-2023081821110378519494
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:50 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Zahoor, Furqan
- Hussin, Fawnizu Azmadi
- Isyaku, Usman Bature
- Gupta, Shagun
- Khanday, Farooq Ahmad
- Chattopadhyay, Anupam
- Abbas, Haider
- SpringerLink (Online service)
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