Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource, 1 online resource.
- Sprache
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Englisch
- Erschienen in
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Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing ; volume:18 ; number:1 ; day:9 ; month:3 ; year:2023 ; pages:1-49 ; date:12.2023
Discover nano ; 18, Heft 1 (9.3.2023), 1-49, 12.2023
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
-
Zahoor, Furqan
Hussin, Fawnizu Azmadi
Isyaku, Usman Bature
Gupta, Shagun
Khanday, Farooq Ahmad
Chattopadhyay, Anupam
Abbas, Haider
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1186/s11671-023-03775-y
- URN
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urn:nbn:de:101:1-2023081821110378519494
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:50 MESZ
Datenpartner
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Beteiligte
- Zahoor, Furqan
- Hussin, Fawnizu Azmadi
- Isyaku, Usman Bature
- Gupta, Shagun
- Khanday, Farooq Ahmad
- Chattopadhyay, Anupam
- Abbas, Haider
- SpringerLink (Online service)
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