Implementation of binarized neural networks immune to device variation and voltage drop employing resistive random access memory bridges and capacitive neurons
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Implementation of binarized neural networks immune to device variation and voltage drop employing resistive random access memory bridges and capacitive neurons ; volume:3 ; number:1 ; day:18 ; month:6 ; year:2024 ; pages:1-15 ; date:12.2024
Communications engineering ; 3, Heft 1 (18.6.2024), 1-15, 12.2024
- Urheber
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Ezzadeen, Mona
Majumdar, Atreya
Valorge, Olivier
Castellani, Niccolo
Gherman, Valentin
Regis, Guillaume
Giraud, Bastien
Noel, Jean-Philippe
Meli, Valentina
Bocquet, Marc
Andrieu, Francois
Querlioz, Damien
Portal, Jean-Michel
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
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10.1038/s44172-024-00226-z
- URN
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urn:nbn:de:101:1-2409110936523.890565660143
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:25 MESZ
Datenpartner
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Beteiligte
- Ezzadeen, Mona
- Majumdar, Atreya
- Valorge, Olivier
- Castellani, Niccolo
- Gherman, Valentin
- Regis, Guillaume
- Giraud, Bastien
- Noel, Jean-Philippe
- Meli, Valentina
- Bocquet, Marc
- Andrieu, Francois
- Querlioz, Damien
- Portal, Jean-Michel
- SpringerLink (Online service)
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