Monolithically integrated GaN power stage for more sustainable 48 V DC–DC converters
Abstract: In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver, level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed and analyzed. The design of the GaN IC is presented in detail, and measurements of the single function blocks and the DC–DC converter up to 48 V are shown. Finally, considerations are given on a life cycle assessment with regard to the GaN power integration. This GaN power IC or stage demonstrates a higher level of integration, resulting in a reduced bill of materials and therefore lower climate impact
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
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Electronics. - 13, 7 (2024) , 1351, ISSN: 2079-9292
- Ereignis
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Veröffentlichung
- (wo)
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Freiburg
- (wer)
-
Universität
- (wann)
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2024
- Urheber
- DOI
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10.3390/electronics13071351
- URN
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urn:nbn:de:bsz:25-freidok-2468414
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:59 MESZ
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Beteiligte
- Basler, Michael
- Mönch, Stefan
- Reiner, Richard
- Benkhelifa, Fouad
- Quay, Rüdiger
- Universität
Entstanden
- 2024
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