Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity ; day:03 ; month:10 ; year:2024 ; extent:11
Advanced materials interfaces ; (03.10.2024) (gesamt 11)
- Urheber
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Yu Tsai, Shang
Tseng, Po‐Hsien
Chen, Chun Chi
Huang, Cheng‐Ming
Yen, Hung‐Wei
Chen, Yi‐Sheng
Lin, Kun‐Lin
Niu, Ranming
Lai, Yu‐Sheng
Ko, Fu‐Hsiang
- DOI
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10.1002/admi.202400536
- URN
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urn:nbn:de:101:1-2410041423135.205632599240
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:21 MESZ
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Beteiligte
- Yu Tsai, Shang
- Tseng, Po‐Hsien
- Chen, Chun Chi
- Huang, Cheng‐Ming
- Yen, Hung‐Wei
- Chen, Yi‐Sheng
- Lin, Kun‐Lin
- Niu, Ranming
- Lai, Yu‐Sheng
- Ko, Fu‐Hsiang
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