Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
Lattice Boundary Enhancement on Thermoelectric Behaviors of Heavily Boron‐Doped Silicon for Energy Harvesting: Electrical versus Thermal Conductivity ; day:03 ; month:10 ; year:2024 ; extent:11
Advanced materials interfaces ; (03.10.2024) (gesamt 11)

Creator
Yu Tsai, Shang
Tseng, Po‐Hsien
Chen, Chun Chi
Huang, Cheng‐Ming
Yen, Hung‐Wei
Chen, Yi‐Sheng
Lin, Kun‐Lin
Niu, Ranming
Lai, Yu‐Sheng
Ko, Fu‐Hsiang

DOI
10.1002/admi.202400536
URN
urn:nbn:de:101:1-2410041423135.205632599240
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:21 AM CEST

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Associated

  • Yu Tsai, Shang
  • Tseng, Po‐Hsien
  • Chen, Chun Chi
  • Huang, Cheng‐Ming
  • Yen, Hung‐Wei
  • Chen, Yi‐Sheng
  • Lin, Kun‐Lin
  • Niu, Ranming
  • Lai, Yu‐Sheng
  • Ko, Fu‐Hsiang

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