Modeling and simulation of negative bias temperature instability : degradation of field-effect transistors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783836459976
- Maße
-
24 cm
- Umfang
-
IX, 126 S.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
Hergestellt on demand
Zugl.: Wien, Techn. Univ., Diss., 2007
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
MOS-FET
Thermische Belastung
Degradation
Simulation
- Ereignis
-
Veröffentlichung
- (wo)
-
Saarbrücken
- (wer)
-
VDM Verlag Dr. Müller
- (wann)
-
[2008]
- Urheber
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 14:14 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Entner, Robert
- VDM Verlag Dr. Müller
Entstanden
- [2008]
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