Modeling and simulation of negative bias temperature instability : degradation of field-effect transistors

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Location: Deutsche Nationalbibliothek Frankfurt am Main

ISBN: 9783836459976

Dimensions: 24 cm

Extent: IX, 126 S.

Language: Englisch

Notes: Ill., graph. Darst.
Hergestellt on demand
Zugl.: Wien, Techn. Univ., Diss., 2007

Classification: Elektrotechnik, Elektronik

Keyword: MOS-FET
Thermische Belastung
Degradation
Simulation

Event: Veröffentlichung

(where): Saarbrücken

(who): VDM Verlag Dr. Müller

(when): [2008]

Creator: Entner, Robert

Table of contents: https://d-nb.info/987736086/04

Rights: Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.

Last update: 11.06.2025, 2:14 PM CEST

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Associated

Entner, Robert
VDM Verlag Dr. Müller

Time of origin

[2008]

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Modeling and simulation of negative bias temperature instability : degradation of field-effect transistors

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Time of origin

Other Objects (12)

Graphene nanoribbon field-effect transistor at high bias

Proton migration mechanism for the instability of organic field-effect transistors

Modeling of bias-induced changes of organic field-effect transistor characteristics

Terahertz-frequency plasmonic-crystal instability in field-effect transistors with asymmetric gate arrays

Metal nanoparticle field-effect transistor

Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

N-heteroacenes in organic field-effect transistors

Interface engineering in organic field-effect transistors

Solution-processing of vertical field-effect transistors

Operational stability of organic field-effect transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Graphene nanoribbon field-effect transistor at high bias

Proton migration mechanism for the instability of organic field-effect transistors

Modeling of bias-induced changes of organic field-effect transistor characteristics

Terahertz-frequency plasmonic-crystal instability in field-effect transistors with asymmetric gate arrays

Metal nanoparticle field-effect transistor

Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

N-heteroacenes in organic field-effect transistors

Interface engineering in organic field-effect transistors

Solution-processing of vertical field-effect transistors

Operational stability of organic field-effect transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

Graphene nanoribbon field-effect transistor at high bias

Proton migration mechanism for the instability of organic field-effect transistors

Modeling of bias-induced changes of organic field-effect transistor characteristics

Terahertz-frequency plasmonic-crystal instability in field-effect transistors with asymmetric gate arrays

Metal nanoparticle field-effect transistor

Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

N-heteroacenes in organic field-effect transistors

Interface engineering in organic field-effect transistors

Solution-processing of vertical field-effect transistors

Operational stability of organic field-effect transistors

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

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