- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Resistive Switching Acceleration Induced by Thermal Confinement ; day:30 ; month:08 ; year:2024 ; extent:8
Advanced electronic materials ; (30.08.2024) (gesamt 8)
- Creator
- DOI
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10.1002/aelm.202400555
- URN
-
urn:nbn:de:101:1-2408311411406.271758229053
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:26 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Sarantopoulos, Alexandros
- Lange, Kristof
- Rivadulla, Francisco
- Menzel, Stephan
- Dittmann, Regina
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The ultimate switching speed limit of redox-based resistive switching devices
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects
Review on resistive switching devices based on multiferroic BiFeO3
In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
Picosecond multilevel resistive switching in tantalum oxide thin films
Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory
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Untersuchungen zur Rolle des Insulinrezeptorgens bei der genetischen Determination eines Typ-II-Diabetes-Mellitus : Verwendung von Restriktionsfragmentlängenpolymorphismen als Genmarker
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The ultimate switching speed limit of redox-based resistive switching devices
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects
Review on resistive switching devices based on multiferroic BiFeO3
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In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices
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