Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
- Sprache
-
Englisch
- Identifier
-
1310697973
Beteiligte Personen und Organisationen
- DOI
-
10.18154/RWTH-2023-10850
- URN
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
09.01.2024, 09:53 MEZ
Beteiligte
- Lange, Kristof
- Waser, Rainer
- Menzel, Stephan
Ähnliche Objekte (12)
Information technology. - 2 / ed. by Rainer Waser
Information technology. - 1 / ed. by Rainer Waser
Polar oxides : properties, characterization, and imaging
Nanoelectronics and information technology : advanced electronic materials and novel devices
Nanoelectronics and information technology : advanced electronic materials and novel devices
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
Non-standard switching phenomena and interface effects in resistive switching devices
Modeling and simulation of valence-change based resistive switching
A numerical simulation model of valence-change-based resistive switching
Defect interactions and diffusion in resistive switching oxides
Physics-based compact modeling of valence-change-based resistive switching devices
In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
Information technology. - 2 / ed. by Rainer Waser
Information technology. - 1 / ed. by Rainer Waser
Polar oxides : properties, characterization, and imaging
Nanoelectronics and information technology : advanced electronic materials and novel devices
Nanoelectronics and information technology : advanced electronic materials and novel devices
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
Non-standard switching phenomena and interface effects in resistive switching devices
Modeling and simulation of valence-change based resistive switching
A numerical simulation model of valence-change-based resistive switching
Defect interactions and diffusion in resistive switching oxides
Physics-based compact modeling of valence-change-based resistive switching devices
In-Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
Information technology. - 2 / ed. by Rainer Waser
Information technology. - 1 / ed. by Rainer Waser
Polar oxides : properties, characterization, and imaging
Nanoelectronics and information technology : advanced electronic materials and novel devices
Nanoelectronics and information technology : advanced electronic materials and novel devices
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
Non-standard switching phenomena and interface effects in resistive switching devices
Modeling and simulation of valence-change based resistive switching
A numerical simulation model of valence-change-based resistive switching
Defect interactions and diffusion in resistive switching oxides
Physics-based compact modeling of valence-change-based resistive switching devices