Wettability investigations and wet transfer enhancement of large-area CVD-Graphene on aluminum nitride

Abstract: The two-dimensional and virtually massless character of graphene attracts great interest for radio frequency devices, such as surface and bulk acoustic wave resonators. Due to its good electric conductivity, graphene might be an alternative as a virtually massless electrode by improving resonator performance regarding mass-loading effects. We report on an optimization of the commonly used wet transfer technique for large-area graphene, grown via chemical vapor deposition, onto aluminum nitride (AlN), which is mainly used as an active, piezoelectric material for acoustic devices. Today, graphene wet transfer is well-engineered for silicon dioxide (SiO2). Investigations on AlN substrates reveal highly different surface properties compared to SiO2 regarding wettability, which strongly influences the quality of transferred graphene monolayers. Both physical and chemical effects of a plasma treatment of AlN surfaces change wettability and avoid large-scale cracks in the transferred graphene sheet during desiccation. Spatially-resolved Raman spectroscopy reveals a strong strain and doping dependence on AlN plasma pretreatments correlating with the electrical conductivity of graphene. In our work, we achieved transferred crack-free large-area (40 × 40 mm2) graphene monolayers with sheet resistances down to 350 Ω/sq. These achievements make graphene more powerful as an eco-friendly and cheaper replacement for conventional electrode materials used in radio frequency resonator devices

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch
Anmerkungen
Nanomaterials. 7, 8 (2017), 226, DOI 10.3390/nano7080226, issn: 2079-4991
IN COPYRIGHT http://rightsstatements.org/page/InC/1.0 rs

Klassifikation
Industrielle und handwerkliche Fertigung
Schlagwort
Benetzung
CVD-Verfahren
Aluminiumnitrid

Ereignis
Veröffentlichung
(wo)
Freiburg
(wer)
Universität
(wann)
2017
Urheber
Knapp, Marius
Hoffmann, Rene
Cimalla, Volker
Ambacher, Oliver
Beteiligte Personen und Organisationen

DOI
10.3390/nano7080226
URN
urn:nbn:de:bsz:25-freidok-131631
Rechteinformation
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Letzte Aktualisierung
15.08.2025, 07:36 MESZ

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Entstanden

  • 2017

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