Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer
Thin film electronics fabricated with non‐toxic and abundant materials are enabling for emerging bioelectronic technologies. Herein complementary‐like inverters comprising transistors using 6,6′‐dichloroindigo as the semiconductor and trimethylsilyl‐cellulose (TMSC) films on anodized aluminum as bilayer dielectric layer are demonstrated. The inverters operate both in the first and third quadrant, exhibiting a maximum static gain of 22 and a noise margin of 58% at a supply voltage of 14 V. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Ambipolar inverters with natural origin organic materials as gate dielectric and semiconducting layer ; volume:9 ; number:6 ; year:2015 ; pages:358-361 ; extent:4
Physica status solidi / Rapid research letters. Rapid research letters ; 9, Heft 6 (2015), 358-361 (gesamt 4)
- Creator
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Petritz, Andreas
Fian, Alexander
Głowacki, Eric
Sariciftci, Niyazi Serdar
Stadlober, Barbara
Irimia‐Vladu, Mihai
- DOI
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10.1002/pssr.201510139
- URN
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urn:nbn:de:101:1-2022112505454690263526
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:36 AM CEST
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Associated
- Petritz, Andreas
- Fian, Alexander
- Głowacki, Eric
- Sariciftci, Niyazi Serdar
- Stadlober, Barbara
- Irimia‐Vladu, Mihai
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