- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783642365348
3642365345
- Maße
-
24 cm
- Umfang
-
XXXII, 489 S.
- Sprache
-
Englisch
- Anmerkungen
-
Ill., graph. Darst.
Literaturangaben
- Erschienen in
-
Advanced microelectronics ; Vol. 43
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
High-k-Dielektrikum
Gate-Oxid
MOS-FET
Dielektrische Eigenschaft
- Ereignis
-
Veröffentlichung
- (wo)
-
Berlin, Heidelberg
- (wer)
-
Springer
- (wann)
-
2013
- Beteiligte Personen und Organisationen
-
Kar, Samares
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:57 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Aufsatzsammlung
Beteiligte
- Kar, Samares
- Springer
Entstanden
- 2013
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