Hochschulschrift
Reliability of high-k/metal gate field-effect transistors considering circuit operational constraints
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783741208690
3741208698
- Maße
-
21 cm, 189 g
- Umfang
-
118 Seiten
- Ausgabe
-
[1. Auflage]
- Sprache
-
Englisch
- Anmerkungen
-
Illustrationen
Technische Universität Dresden, Dissertation, 2015
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
High-k Metal-Gate-Technik
Hafniumdioxid
High-k-Dielektrikum
MOS-FET
Statisches RAM
Schaltvorgang
Degradation
Schwellenspannung
Durchschlagspannung
Zuverlässigkeit
- Ereignis
-
Veröffentlichung
- (wo)
-
Norderstedt
- (wer)
-
BoD - Books on Demand
- (wann)
-
[2016?]
- Urheber
- Beteiligte Personen und Organisationen
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:43 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
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Objekttyp
- Hochschulschrift
Beteiligte
- Kupke, Steve
- Books on Demand GmbH. Norderstedt
- BoD - Books on Demand
Entstanden
- [2016?]
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