Hochschulschrift
Study of gallium nitride high electron mobility transistors towards highly efficient and reliable power switching
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783844077162
3844077162
- Dimensions
-
21 cm, 225 g
- Extent
-
xvi, 132 Seiten
- Edition
-
[1. Auflage]
- Language
-
Englisch
- Notes
-
Illustrationen
Universität Stuttgart, Dissertation, 2020
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
HEMT
Galliumnitrid
Zwischenschicht
Leistungsschalter
Zuverlässigkeit
Effizienzsteigerung
- Event
-
Veröffentlichung
- (where)
-
Düren
- (who)
-
Shaker Verlag
- (when)
-
2020
- Creator
- Contributor
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:05 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Heuken, Lars
- Shaker Verlag
- Shaker Verlag
Time of origin
- 2020
Other Objects (12)
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Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Neutron Induced Single-Event-Effects in Gallium-Nitride High Electron Mobility Transistors
Ferroelectric Polarization Switching Behavior of Hf 0.5 Zr 0.5 O 2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures
Design of millimeter-wave power amplifiers in gallium nitride high-electron-mobility transistor technology
Technology of gallium nitride crystal growth
Cathodoluminescence spectra of gallium nitride nanorods
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Structural characterization of ion implanted gallium nitride
Normally-off transistor topologies in gallium nitride technology
Gallium nitride high electron mobility transistors on native substrates for power switching applications : fabrication, characterization and modelling
Gallium nitride electronics
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Neutron Induced Single-Event-Effects in Gallium-Nitride High Electron Mobility Transistors
Ferroelectric Polarization Switching Behavior of Hf 0.5 Zr 0.5 O 2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures
Design of millimeter-wave power amplifiers in gallium nitride high-electron-mobility transistor technology
Technology of gallium nitride crystal growth
Cathodoluminescence spectra of gallium nitride nanorods
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker
Structural characterization of ion implanted gallium nitride
Normally-off transistor topologies in gallium nitride technology
Gallium nitride high electron mobility transistors on native substrates for power switching applications : fabrication, characterization and modelling
Gallium nitride electronics
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Neutron Induced Single-Event-Effects in Gallium-Nitride High Electron Mobility Transistors
Ferroelectric Polarization Switching Behavior of Hf 0.5 Zr 0.5 O 2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures
Design of millimeter-wave power amplifiers in gallium nitride high-electron-mobility transistor technology
Technology of gallium nitride crystal growth
Cathodoluminescence spectra of gallium nitride nanorods
Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier : = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker