Monografie
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
- Language
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Englisch
- Extent
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VI, 184 S.
- Notes
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Zugl.: Freiburg (Breisgau), Univ., Diss., 2012
- ISBN
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978-3-8396-0487-8
- Identifier
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1032378298
- Series
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Science for systems; No. 9
Subject
Schaltverstärker ; Mikrowellenverstärker ; Leistungsverstärker ; Galliumnitrid ; HEMT ; Schaltungsentwurf ; Basisstation ; Energieeffizienz ; Galliumnitrid ; Schaltverstärker ; HEMT ; Basisstation ; Mobilfunk ; Leistungsverstärker; Hochschulschrift
Contributor
- Table of contents
- Rights
-
Der Zugriff auf Teile des Objekts ist unbeschränkt möglich.
- Last update
-
15.04.2024, 8:43 AM CEST
Object type
- Monografie
Other Objects (12)
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
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Intermodulation distortion modelling and measurement techniques for GaN HEMT characterization
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Power combining solutions for high-power GaN MMICs at mm-wave frequencies
Partitioning design approach for the reliable design of highly efficient RF power amplifiers
Modeling of dispersive millimeter-wave GaN HEMT devices for high power amplifier design
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Micro-system: Gallium Nitride RF-broad-band high-power amplifier
Efficiency enhancement of linear GaN RF power amplifiers using the Doherty technique
Large-signal modeling of GaN HEMTs for linear power amplifier design
Intermodulation distortion modelling and measurement techniques for GaN HEMT characterization
AlGaN,GaN-based millimeter-wave high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
Hocheffiziente frequenzagile Mikrowellen-Leistungsverstärker auf Basis von Verbindungshalbleitern und Ferroelektrika
High power AlGaN/GaN HFETs for industrial, scientific and medical applications
Power combining solutions for high-power GaN MMICs at mm-wave frequencies
Partitioning design approach for the reliable design of highly efficient RF power amplifiers
Modeling of dispersive millimeter-wave GaN HEMT devices for high power amplifier design
Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers
Micro-system: Gallium Nitride RF-broad-band high-power amplifier
Efficiency enhancement of linear GaN RF power amplifiers using the Doherty technique
Large-signal modeling of GaN HEMTs for linear power amplifier design
Intermodulation distortion modelling and measurement techniques for GaN HEMT characterization
AlGaN,GaN-based millimeter-wave high electron mobility transistors
GaN-based Tri-gate high electron mobility transistors
Hocheffiziente frequenzagile Mikrowellen-Leistungsverstärker auf Basis von Verbindungshalbleitern und Ferroelektrika
High power AlGaN/GaN HFETs for industrial, scientific and medical applications
Power combining solutions for high-power GaN MMICs at mm-wave frequencies
Partitioning design approach for the reliable design of highly efficient RF power amplifiers