Gradual reset and set characteristics in yttrium oxide based resistive random access memory
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: Semiconductor Science and Technology, 34, (7), IOP Publishing, ISSN 0268-1242
- Ereignis
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Veröffentlichung
- (wo)
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Darmstadt
- (wer)
-
Universitäts- und Landesbibliothek
- (wann)
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2021
- Urheber
- DOI
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10.26083/tuprints-00019328
- URN
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urn:nbn:de:tuda-tuprints-193289
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:21 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Petzold, Stefan
- Piros, Eszter
- Sharath, Sankaramangalam Ulhas
- Zintler, Alexander
- Hildebrandt, Erwin
- Molina-Luna, Leopoldo
- Wenger, Christian
- Alff, Lambert
- Universitäts- und Landesbibliothek
Entstanden
- 2021
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