Hochschulschrift
Physical limitations of InP-InGaAs heterojunction bipolar transistors
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783896497642
3896497642
- Maße
-
21 cm
- Umfang
-
IV, 170 S.
- Ausgabe
-
1. ed.
- Sprache
-
Englisch
- Anmerkungen
-
graph. Darst.
Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 2002
- Erschienen in
-
Series in microelectronics ; Vol. 125
- Schlagwort
-
Indiumphosphid
Indiumarsenid
Galliumarsenid
Heterobipolartransistor
- Ereignis
-
Veröffentlichung
- (wo)
-
Konstanz
- (wer)
-
Hartung-Gorre
- (wann)
-
2002
- Urheber
-
Rohner, Marcel
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 14:14 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Objekttyp
- Hochschulschrift
Beteiligte
- Rohner, Marcel
- Hartung-Gorre
Entstanden
- 2002
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