- Alternative title
-
Bauelementesimulation von Hochfrequenz-SiGe-Heterobipolartransistoren
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Berlin, Technische Universität Berlin, Dissertation, 2018
- Classification
-
Physik
- Keyword
-
Bipolar transistors
Performance
- Event
-
Veröffentlichung
- (where)
-
Berlin
- (who)
-
Technische Universität Berlin
- (when)
-
2018
- Creator
- Contributor
-
Tillack, Bernd
Tillack, Bernd
Jungemann, Christoph
Heinrich, Wolfgang
- DOI
-
10.14279/depositonce-7045
- Handle
-
11303/7885
- URN
-
urn:nbn:de:101:1-2018060601575440270010
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:55 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Korn, Julian
- Tillack, Bernd
- Jungemann, Christoph
- Heinrich, Wolfgang
- Technische Universität Berlin
Time of origin
- 2018
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Metal organic vapour phase epitaxy for GaInP-GaAs heterojunction bipolar transistors
High-performance transceiver front-ends in SiGe technologies for 400Gb/s optical links
Characterization and Compact Modeling of Silicon-Germanium Heterojunction Bipolar Transistors from Room to Cryogenic Temperatures
Semi-classical simulation of state-of-the-art toward-terahertz silicon-germanium heterojunction bipolar transistors
Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors
OMCVD grown InP/InGaAs heterojunction bipolar transistors
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GaAs-GaAlAs heterojunction bipolar transistors and related integrated circuits
Device grade SiGe heterostructures grown by plasma assisted techniques
High-speed InP heterojunction bipolar transistors and integrated circuits in transferred substrate technology
High-speed InP heterojunction bipolar transistors and integrated circuits in transferred substrate technology
InP double heterojunction bipolar transistors for driver circuits in fiber optical communication systems
Metal organic vapour phase epitaxy for GaInP-GaAs heterojunction bipolar transistors
High-performance transceiver front-ends in SiGe technologies for 400Gb/s optical links
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