Impurities confined in quantum structures

The introduction of impurities,even in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their applications. In this book, the progress on elucidating the physical properties of impurities confined in quantum structures are reviewed with an emphasis on the experimental aspects. The major results of various kinds of characterization, such as infrared spectroscopy, Raman measurements, luminescence characterization, perturbation spectroscopy and dynamical studies of the confined impurities are reviewed, but also the theoretical basis to calculate the electronic structure of the confined donors and acceptors are presented. This monograph also describes more specific aspects of the confined impurities such as the properties in the high doping regime and the effects of hydrogen passivation. TOC:1. Quantum Wells; 2. Impurities in Bulk; 3. Confined Neutral Donor States; 4. Negatively Charged Donor States; 5. Confined Acceptor States; 6. High Doping Regime; 7.Hydrogen Passivation; 10. Conclusions.

Standort
Deutsche Nationalbibliothek Frankfurt am Main
ISBN
9783540223207
3540223207
Maße
24 cm
Umfang
VIII, 137 S.
Sprache
Englisch
Anmerkungen
graph. Darst.
Literaturverz. S. 125 - 133

Erschienen in
Springer series in materials science ; 77

Klassifikation
Physik
Schlagwort
Halbleiter
Quantenwell
Störstelle
Elektronenstruktur
Optische Eigenschaft

Ereignis
Veröffentlichung
(wo)
Berlin, Heidelberg, New York
(wer)
Springer
(wann)
2004
Urheber
Holtz, Per Olof
Zhao, Qing Xiang

Inhaltsverzeichnis
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Letzte Aktualisierung
11.06.2025, 13:46 MESZ

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Beteiligte

  • Holtz, Per Olof
  • Zhao, Qing Xiang
  • Springer

Entstanden

  • 2004

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