Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction ; volume:14 ; number:1 ; day:13 ; month:9 ; year:2024 ; pages:1-11 ; date:12.2024
Scientific reports ; 14, Heft 1 (13.9.2024), 1-11, 12.2024
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
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Polumati, Gowtham
Kolli, Chandra Sekhar Reddy
Kumar, Aayush
Salazar, Mario Flores
Luna Bugallo, Andres De
Sahatiya, Parikshit
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41598-024-72448-2
- URN
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urn:nbn:de:101:1-2411272136032.127196068925
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:22 MESZ
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Beteiligte
- Polumati, Gowtham
- Kolli, Chandra Sekhar Reddy
- Kumar, Aayush
- Salazar, Mario Flores
- Luna Bugallo, Andres De
- Sahatiya, Parikshit
- SpringerLink (Online service)
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