Highly Efficient CMOS Compatible Ohmic Contacts for WBG Nitride Power Devices
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
Freiberg, Technische Universität Bergakademie Freiberg, Dissertation, 2024
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Galliumnitrid
CMOS
HEMT
Siliciumcarbid
Leistungshalbleiter
Leistungselektronik
Nachhaltigkeit
Energiewende
Halbleiter
CMOS
Schichtwiderstand
Kontaktwiderstand
HEMT
Intermetallische Verbindungen
Titan
Aluminium
Vanadium
Stickstoff
Dünne Schicht
Rauigkeit
- Ereignis
-
Veröffentlichung
- (wo)
-
Freiberg
- (wer)
-
Technische Universität Bergakademie Freiberg
- (wann)
-
2025
- Urheber
- Beteiligte Personen und Organisationen
- URN
-
urn:nbn:de:bsz:105-qucosa2-949337
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:39 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Garbe, Valentin
- Heitmann, Johannes
- Schwarz, Ulrich Theodor
- Technische Universität Bergakademie Freiberg
Entstanden
- 2025
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