Highly Efficient CMOS Compatible Ohmic Contacts for WBG Nitride Power Devices

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Notes: Freiberg, Technische Universität Bergakademie Freiberg, Dissertation, 2024

Classification: Elektrotechnik, Elektronik

Keyword: Galliumnitrid
CMOS
HEMT
Siliciumcarbid
Leistungshalbleiter
Leistungselektronik
Nachhaltigkeit
Energiewende
Halbleiter
CMOS
Schichtwiderstand
Kontaktwiderstand
HEMT
Intermetallische Verbindungen
Titan
Aluminium
Vanadium
Stickstoff
Dünne Schicht
Rauigkeit

Event: Veröffentlichung

(where): Freiberg

(who): Technische Universität Bergakademie Freiberg

(when): 2025

Creator: Garbe, Valentin

Contributor: Heitmann, Johannes
Schwarz, Ulrich Theodor

URN: urn:nbn:de:bsz:105-qucosa2-949337

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:39 AM CEST

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Associated

Garbe, Valentin
Heitmann, Johannes
Schwarz, Ulrich Theodor
Technische Universität Bergakademie Freiberg

Time of origin

2025

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Highly Efficient CMOS Compatible Ohmic Contacts for WBG Nitride Power Devices

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Other Objects (12)

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