- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783540714903
3540714901
- Dimensions
-
24 cm
- Extent
-
XXII, 383 S.
- Language
-
Englisch
- Notes
-
Ill., graph. Darst.
Literaturangaben
- Bibliographic citation
-
Advanced microelectronics ; 27
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
MOS
High-k-Dielektrikum
Germanium
Drei-Fünf-Halbleiter
- Event
-
Veröffentlichung
- (where)
-
Berlin, Heidelberg, New York, NY
- (who)
-
Springer
- (when)
-
2007
- Contributor
-
Dimoulas, Athanasios
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:27 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Aufsatzsammlung
Associated
- Dimoulas, Athanasios
- Springer
Time of origin
- 2007
Other Objects (12)
Carrier mobility in advanced channel materials using alternative gate dielectrics
Carrier mobility in advanced channel materials using alternative gate dielectrics
Carrier mobility in advanced channel materials using alternative gate dielectrics
Gate Stack Engineering mit atomar selbstlimitierenden Dielektrika
Functionalization of inorganic semiconductors by advanced nanostructures
Carrier mobility in semiconductors at very low temperatures
Photoelectric properties and applications of low mobility semiconductors
Theoretical Investigation of High-k Gate Stacks in nano-MOSFETs
Work function engineering for metal, high-K dielectric gate stacks
Gate stack engineering for emerging polarization based non-volatile memories
Work function enginneering for metal, high-K dielectric gate stacks
Advanced defect control in wide-bandgap III-nitride semiconductors
Carrier mobility in advanced channel materials using alternative gate dielectrics
Carrier mobility in advanced channel materials using alternative gate dielectrics
Carrier mobility in advanced channel materials using alternative gate dielectrics
Gate Stack Engineering mit atomar selbstlimitierenden Dielektrika
Functionalization of inorganic semiconductors by advanced nanostructures
Carrier mobility in semiconductors at very low temperatures
Photoelectric properties and applications of low mobility semiconductors
Theoretical Investigation of High-k Gate Stacks in nano-MOSFETs
Work function engineering for metal, high-K dielectric gate stacks
Gate stack engineering for emerging polarization based non-volatile memories
Work function enginneering for metal, high-K dielectric gate stacks
Advanced defect control in wide-bandgap III-nitride semiconductors
Carrier mobility in advanced channel materials using alternative gate dielectrics
Carrier mobility in advanced channel materials using alternative gate dielectrics
Carrier mobility in advanced channel materials using alternative gate dielectrics
Gate Stack Engineering mit atomar selbstlimitierenden Dielektrika
Functionalization of inorganic semiconductors by advanced nanostructures
Carrier mobility in semiconductors at very low temperatures
Photoelectric properties and applications of low mobility semiconductors
Theoretical Investigation of High-k Gate Stacks in nano-MOSFETs
Work function engineering for metal, high-K dielectric gate stacks
Gate stack engineering for emerging polarization based non-volatile memories
Work function enginneering for metal, high-K dielectric gate stacks