Hochschulschrift
Gate stack engineering for emerging polarization based non-volatile memories
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783744867887
3744867889
- Dimensions
-
21 cm, 229 g
- Extent
-
XII, 137 Seiten
- Edition
-
[1. Auflage]
- Language
-
Englisch
- Notes
-
Illustrationen
Technische Universität Dresden, Dissertation, 2017
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
FRAM
Hafniumdioxid
High-k-Dielektrikum
Dynamisches RAM
Zirkoniumdioxid
Stapel
Schaltverhalten
Physikalischer Effekt
Antiferroelektrizität
Nichtflüchtiger Speicher
- Event
-
Veröffentlichung
- (where)
-
Norderstedt
- (who)
-
BoD Books on Demand
- (when)
-
2017
- Creator
- Contributor
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.03.2025, 12:11 PM CET
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Pešić, Milan Dragan
- Books on Demand GmbH. Norderstedt
- BoD Books on Demand
Time of origin
- 2017
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