Behaviour of 4H-SiC Power Semiconductor Devices under Extreme Operating Conditions
- Weitere Titel
-
Verhalten von 4H-SiC Leistungshalbleiterbauelementen unter extremen Betriebsbedingungen
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Anmerkungen
-
München, Technische Universität München, Dissertation, 2021
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Semiconductors
- Ereignis
-
Veröffentlichung
- (wo)
-
München
- (wer)
-
Universitätsbibliothek der TU München
- (wann)
-
2021
- Urheber
-
Lechner, Benedikt
- Beteiligte Personen und Organisationen
- URN
-
urn:nbn:de:bvb:91-diss-20211103-1578949-1-1
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:52 MEZ
Datenpartner
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Beteiligte
- Lechner, Benedikt
- Schrag, Gabriele
- Lutz, Josef
- Universitätsbibliothek der TU München
Entstanden
- 2021
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