Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor ; volume:10 ; number:1 ; day:17 ; month:12 ; year:2020 ; pages:1-9 ; date:12.2020
Scientific reports ; 10, Heft 1 (17.12.2020), 1-9, 12.2020
- Creator
- Contributor
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SpringerLink (Online service)
- DOI
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10.1038/s41598-020-79154-9
- URN
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urn:nbn:de:101:1-2021012019520689577420
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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20.08.2025, 2:51 PM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Pozina, Galia
- Hsu, Chih-Wei
- Abrikossova, Natalia
- Kaliteevski, Mikhail A.
- Hemmingsson, Carl
- SpringerLink (Online service)
Other Objects (12)
Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire
Exploring the growth of refractory metal and sapphire films by thermal laser epitaxy
![The electronic properties of β-Ga2O3 [beta-Ga2O3]](/assets/placeholder/searchResultMediaNoDigitisedMedia.png)
The electronic properties of β-Ga2O3 [beta-Ga2O3]
Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
Theoretical Spectroscopy of Ga2O3
Sapphire pushes ahead
Plate III. Sapphire
Thermogravimetric study of metal–organic precursors and their suitability for hybrid molecular beam epitaxy
Magnetische und röntgenographische Untersuchungen zum Kristallwachstum von β-Ga2O3-Einkristallen [Beta-Ga2O3-Einkristallen], zur Kinetik der Festkörperreaktionen in Ga2O3-Cr2O3-Mischkristallen und zum Phasendiagramm des Systems Ga2O3 - Cr2O3
Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire
Exploring the growth of refractory metal and sapphire films by thermal laser epitaxy
The electronic properties of β-Ga2O3 [beta-Ga2O3]
Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
Theoretical Spectroscopy of Ga2O3
Sapphire pushes ahead
Plate III. Sapphire
Thermogravimetric study of metal–organic precursors and their suitability for hybrid molecular beam epitaxy
Magnetische und röntgenographische Untersuchungen zum Kristallwachstum von β-Ga2O3-Einkristallen [Beta-Ga2O3-Einkristallen], zur Kinetik der Festkörperreaktionen in Ga2O3-Cr2O3-Mischkristallen und zum Phasendiagramm des Systems Ga2O3 - Cr2O3
Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire
Exploring the growth of refractory metal and sapphire films by thermal laser epitaxy
The electronic properties of β-Ga2O3 [beta-Ga2O3]
Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
Theoretical Spectroscopy of Ga2O3
Sapphire pushes ahead
Plate III. Sapphire
Thermogravimetric study of metal–organic precursors and their suitability for hybrid molecular beam epitaxy