Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Materials Today Physics (45:) - Amsterdam : Elsevier - Art.-Id. 101463
- Ereignis
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Veröffentlichung
- (wo)
-
Berlin
- (wer)
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Technische Universität Berlin
- (wann)
-
2024
- Urheber
-
Mazzolini, Piero
Varley, Joel Basile
Parisini, Antonella
Sacchi, Anna
Pavesi, Maura
Bosio, Alessio
Bosi, Matteo
Seravalli, Luca
Janzen, Benjamin M.
Marggraf, Marcella Naomi
Bernhardt, Nils
Wagner, Markus R.
Ardenghi, Andrea
Bierwagen, Oliver
Falkenstein, Andreas
Kler, Joe
De Souza, Roger A.
Martin, Manfred
Mezzadri, Francesco
Borelli, Carmine
Fornari, Roberto
- DOI
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10.14279/depositonce-20861
- Handle
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11303/22060
- URN
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urn:nbn:de:101:1-2406260158288.010731382533
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:45 MEZ
Datenpartner
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Beteiligte
- Mazzolini, Piero
- Varley, Joel Basile
- Parisini, Antonella
- Sacchi, Anna
- Pavesi, Maura
- Bosio, Alessio
- Bosi, Matteo
- Seravalli, Luca
- Janzen, Benjamin M.
- Marggraf, Marcella Naomi
- Bernhardt, Nils
- Wagner, Markus R.
- Ardenghi, Andrea
- Bierwagen, Oliver
- Falkenstein, Andreas
- Kler, Joe
- De Souza, Roger A.
- Martin, Manfred
- Mezzadri, Francesco
- Borelli, Carmine
- Fornari, Roberto
- Technische Universität Berlin
Entstanden
- 2024
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