Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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2045-2322
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
online resource.
- Erschienen in
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Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface ; volume:8 ; number:1 ; day:23 ; month:1 ; year:2018 ; pages:1-10 ; date:12.2018
Scientific reports ; 8, Heft 1 (23.1.2018), 1-10, 12.2018
- Klassifikation
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Naturwissenschaften
- Urheber
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Nishio, Kengo
- Beteiligte Personen und Organisationen
-
Yayama, Tomoe
Miyazaki, Takehide
Taoka, Noriyuki
Shimizu, Mitsuaki
SpringerLink (Online service)
- DOI
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10.1038/s41598-018-19283-4
- URN
-
urn:nbn:de:1111-201804131319
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:57 MESZ
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Beteiligte
- Nishio, Kengo
- Yayama, Tomoe
- Miyazaki, Takehide
- Taoka, Noriyuki
- Shimizu, Mitsuaki
- SpringerLink (Online service)
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