Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
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Englisch
- Erschienen in
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Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes ; volume:17 ; number:1 ; day:28 ; month:3 ; year:2024 ; pages:1-8 ; date:12.2024
Frontiers of optoelectronics ; 17, Heft 1 (28.3.2024), 1-8, 12.2024
- Urheber
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Yin, Jian
Hwang, David
Siboni, Hossein Zamani
Fathi, Ehsanollah
Chaji, Reza
Ban, Dayan
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1007/s12200-024-00111-9
- URN
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urn:nbn:de:101:1-2406262101121.241025120050
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
- 14.08.2025, 08:44 UTC
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Beteiligte
- Yin, Jian
- Hwang, David
- Siboni, Hossein Zamani
- Fathi, Ehsanollah
- Chaji, Reza
- Ban, Dayan
- SpringerLink (Online service)
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