Electrical Properties of Sn‐Doped α‐Ga 2 O 3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Electrical Properties of Sn‐Doped α‐Ga 2 O 3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition ; volume:217 ; number:3 ; year:2020 ; extent:5
Physica status solidi / A. A, Applications and materials science ; 217, Heft 3 (2020) (gesamt 5)
- Creator
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Akaiwa, Kazuaki
Ota, Katsuya
Sekiyama, Takahito
Abe, Tomoki
Shinohe, Takashi
Ichino, Kunio
- DOI
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10.1002/pssa.201900632
- URN
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urn:nbn:de:101:1-2022070407195135706617
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:35 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Akaiwa, Kazuaki
- Ota, Katsuya
- Sekiyama, Takahito
- Abe, Tomoki
- Shinohe, Takashi
- Ichino, Kunio
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