Hochschulschrift
Low temperature grown inP-based HFET : characterization and modelling
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Maße
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21 cm
- Umfang
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V, 130 S.
- Sprache
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Englisch
- Anmerkungen
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graph. Darst.
Ulm, Univ., Diss., 2001
- Schlagwort
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Indiumarsenid
Aluminiumarsenid
Indiumphosphid
Niedrigtemperatur
Heterostruktur-Bauelement
Feldeffekttransistor
- Urheber
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Lee, Li-heng
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:43 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Objekttyp
- Hochschulschrift
Beteiligte
- Lee, Li-heng
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