Hochschulschrift
Low temperature grown inP-based HFET : characterization and modelling
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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21 cm
- Extent
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V, 130 S.
- Language
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Englisch
- Notes
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graph. Darst.
Ulm, Univ., Diss., 2001
- Keyword
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Indiumarsenid
Aluminiumarsenid
Indiumphosphid
Niedrigtemperatur
Heterostruktur-Bauelement
Feldeffekttransistor
- Creator
-
Lee, Li-heng
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
2025-06-11T13:43:14+0200
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Lee, Li-heng
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