Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory ; day:17 ; month:01 ; year:2022 ; extent:12
Advanced electronic materials ; (17.01.2022) (gesamt 12)
- Urheber
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Jin, Soo‐Min
Kim, Hea‐Jee
Woo, Dae‐Seong
Jung, Sung‐Mok
Kim, Dong‐Eon
Shim, Tae‐Hun
Park, Jea‐Gun
- DOI
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10.1002/aelm.202101083
- URN
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urn:nbn:de:101:1-2022011714175556760195
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:26 MESZ
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Beteiligte
- Jin, Soo‐Min
- Kim, Hea‐Jee
- Woo, Dae‐Seong
- Jung, Sung‐Mok
- Kim, Dong‐Eon
- Shim, Tae‐Hun
- Park, Jea‐Gun
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