Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching ; day:19 ; month:01 ; year:2023 ; extent:10
Advanced electronic materials ; (19.01.2023) (gesamt 10)
- Urheber
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Min, SunHwa
Hyeon, Da Seul
Jang, Gabriel
Choi, Jisoo
Seo, Jeongwoo
Kwon, Soyeong
Kim, Dong‐Wook
Hong, Jin Pyo
- DOI
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10.1002/aelm.202201090
- URN
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urn:nbn:de:101:1-2023012014094684071825
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:25 MESZ
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Beteiligte
- Min, SunHwa
- Hyeon, Da Seul
- Jang, Gabriel
- Choi, Jisoo
- Seo, Jeongwoo
- Kwon, Soyeong
- Kim, Dong‐Wook
- Hong, Jin Pyo
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