Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory ; volume:9 ; number:1 ; day:29 ; month:1 ; year:2014 ; pages:1-5 ; date:12.2014
Nanoscale research letters ; 9, Heft 1 (29.1.2014), 1-5, 12.2014

Creator
Chen, Yi-Jiun
Chen, Hsin-Lu
Young, Tai-Fa
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Kuan-Chang
Zhang, Rui
Chen, Kai-Huang
Lou, Jen-Chung
Chu, Tian-Jian
Chen, Jung-Hui
Bao, Ding-Hua
Sze, Simon M.
Contributor
SpringerLink (Online service)

DOI
10.1186/1556-276X-9-52
URN
urn:nbn:de:101:1-2021081423201382008597
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 11:01 AM CEST

Data provider

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Associated

  • Chen, Yi-Jiun
  • Chen, Hsin-Lu
  • Young, Tai-Fa
  • Chang, Ting-Chang
  • Tsai, Tsung-Ming
  • Chang, Kuan-Chang
  • Zhang, Rui
  • Chen, Kai-Huang
  • Lou, Jen-Chung
  • Chu, Tian-Jian
  • Chen, Jung-Hui
  • Bao, Ding-Hua
  • Sze, Simon M.
  • SpringerLink (Online service)

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