Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory ; volume:9 ; number:1 ; day:29 ; month:1 ; year:2014 ; pages:1-5 ; date:12.2014
Nanoscale research letters ; 9, Heft 1 (29.1.2014), 1-5, 12.2014
- Creator
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Chen, Yi-Jiun
Chen, Hsin-Lu
Young, Tai-Fa
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Kuan-Chang
Zhang, Rui
Chen, Kai-Huang
Lou, Jen-Chung
Chu, Tian-Jian
Chen, Jung-Hui
Bao, Ding-Hua
Sze, Simon M.
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/1556-276X-9-52
- URN
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urn:nbn:de:101:1-2021081423201382008597
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 11:01 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Chen, Yi-Jiun
- Chen, Hsin-Lu
- Young, Tai-Fa
- Chang, Ting-Chang
- Tsai, Tsung-Ming
- Chang, Kuan-Chang
- Zhang, Rui
- Chen, Kai-Huang
- Lou, Jen-Chung
- Chu, Tian-Jian
- Chen, Jung-Hui
- Bao, Ding-Hua
- Sze, Simon M.
- SpringerLink (Online service)