Electrostatic Detection of Shubnikov–de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate‐Defined Quantum Dots

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A gate‐defined quantum dot in bilayer graphene is utilized as a sensitive probe for the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate‐voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, the charge carrier density in the channel is extracted, and from the amplitude the shift of the quantum dot potential. These experimental results are compared with an electrostatic simulation of the device and good agreement is found.

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch

Erschienen in
Electrostatic Detection of Shubnikov–de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate‐Defined Quantum Dots ; volume:257 ; number:12 ; year:2020 ; extent:5
Physica status solidi / B. B, Basic solid state physics ; 257, Heft 12 (2020) (gesamt 5)

Urheber
Banszerus, Luca
Fabian, Thomas
Möller, Samuel
Icking, Eike
Heiming, Henning
Trellenkamp, Stefan
Lentz, Florian
Neumaier, Daniel
Otto, Martin
Watanabe, Kenji
Taniguchi, Takashi
Libisch, Florian
Volk, Christian
Stampfer, Christoph

DOI
10.1002/pssb.202000333
URN
urn:nbn:de:101:1-2022062310220360521155
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
15.08.2025, 07:33 MESZ

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