Electrostatic Detection of Shubnikov–de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate‐Defined Quantum Dots

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A gate‐defined quantum dot in bilayer graphene is utilized as a sensitive probe for the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate‐voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, the charge carrier density in the channel is extracted, and from the amplitude the shift of the quantum dot potential. These experimental results are compared with an electrostatic simulation of the device and good agreement is found.

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Bibliographic citation: Electrostatic Detection of Shubnikov–de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate‐Defined Quantum Dots ; volume:257 ; number:12 ; year:2020 ; extent:5
Physica status solidi / B. B, Basic solid state physics ; 257, Heft 12 (2020) (gesamt 5)

Creator: Banszerus, Luca
Fabian, Thomas
Möller, Samuel
Icking, Eike
Heiming, Henning
Trellenkamp, Stefan
Lentz, Florian
Neumaier, Daniel
Otto, Martin
Watanabe, Kenji
Taniguchi, Takashi
Libisch, Florian
Volk, Christian
Stampfer, Christoph

DOI: 10.1002/pssb.202000333

URN: urn:nbn:de:101:1-2022062310220360521155

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 15.08.2025, 7:33 AM CEST

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Associated

Banszerus, Luca
Fabian, Thomas
Möller, Samuel
Icking, Eike
Heiming, Henning
Trellenkamp, Stefan
Lentz, Florian
Neumaier, Daniel
Otto, Martin
Watanabe, Kenji
Taniguchi, Takashi
Libisch, Florian
Volk, Christian
Stampfer, Christoph

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Electrostatic Detection of Shubnikov–de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate‐Defined Quantum Dots

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Supercurrent mediated by helical edge modes in bilayer graphene

Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene

Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene

Spontaneous time-reversal symmetry breaking in twisted double bilayer graphene

Spontaneous time-reversal symmetry breaking in twisted double bilayer graphene

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

Non-identical moiré twins in bilayer graphene

Non-identical moiré twins in bilayer graphene

Evidence of compensated semimetal with electronic correlations at charge neutrality of twisted double bilayer graphene

Evidence of compensated semimetal with electronic correlations at charge neutrality of twisted double bilayer graphene

Electrostatic Detection of Shubnikov–de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate‐Defined Quantum Dots

Electrostatic Detection of Shubnikov–de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate‐Defined Quantum Dots

Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets

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Topological valley transport at the curved boundary of a folded bilayer graphene

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Coulomb-bound four- and five-particle intervalley states in an atomically-thin semiconductor

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Gate‐Controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D Magnetic Semiconductor CrPS 4

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Supercurrent mediated by helical edge modes in bilayer graphene

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Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene

Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene

Spontaneous time-reversal symmetry breaking in twisted double bilayer graphene

Spontaneous time-reversal symmetry breaking in twisted double bilayer graphene

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

Non-identical moiré twins in bilayer graphene

Non-identical moiré twins in bilayer graphene

Evidence of compensated semimetal with electronic correlations at charge neutrality of twisted double bilayer graphene

Evidence of compensated semimetal with electronic correlations at charge neutrality of twisted double bilayer graphene

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