PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts
Abstract: We investigate the barrier properties of phosphorus-doped Si-rich silicon carbide (SixCy) thin films deposited by PECVD against Al/Si alloying in the context of poly-Si/SiOx passivating contacts. The stability of the implied open circuit voltage (iVOC) after firing of single-sided, full area screen-printed Al-contacts increases with carbon content of the barrier layer and depends on the crystallization scheme applied to the samples. Crystallized SixCy layers with an atomic C concentration of about 20 at.% deposited on pre-crystallized poly-Si predominantly show no significant decrease in iVOC values for peak firing temperatures up to 725°C. https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1291
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts ; volume:2 ; year:2024
SiliconPV conference proceedings ; 2 (2024)
- Urheber
- DOI
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10.52825/siliconpv.v2i.1291
- URN
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urn:nbn:de:101:1-2501250241205.500245264377
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:26 MESZ
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Beteiligte
- Bäurle, David
- Gapp, Benjamin
- Hahn, Giso
- Plagwitz, Heiko
- Terheiden, Barbara
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