PECVD Si<sub>x</sub>C<sub>y</sub> as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiO<sub>x</sub> Passivating Contacts
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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In: DUBOIS, Sébastien, Hrsg.. SiliconPV 2024, the 14th International Conference on Crystalline Silicon Photovoltaics : April 15 - April 19 2024, Chambéry, France. Hannover: TIB Open Publishing, 2024. SiliconPV proceedings. 2. eISSN 2940-2123. Verfügbar unter: doi: 10.52825/siliconpv.v2i.1291
- Event
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Veröffentlichung
- (where)
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Konstanz
- (who)
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KOPS Universität Konstanz
- (when)
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2024
- Creator
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Bäurle, David
Gapp, Benjamin
Hahn, Giso
Plagwitz, Heiko
Terheiden, Barbara
- URN
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urn:nbn:de:bsz:352-2-ge0ls7rdw0tk2
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:38 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Bäurle, David
- Gapp, Benjamin
- Hahn, Giso
- Plagwitz, Heiko
- Terheiden, Barbara
- KOPS Universität Konstanz
Time of origin
- 2024
Other Objects (12)
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Compensation of the sputter damage during a-Si deposition for poly-Si/SiO<sub>x</sub> passivating contacts by ex-situ p-doping
Charge carrier transport mechanism through different oxides for (n) poly-Si/SiO<sub>x</sub> fired passivating contacts
Enhanced oxidation of thermally grown SiO<sub>2</sub> due to P-precipitates
Influence of rear side coating on emitter formation during POCL<sub>3</sub> diffusion process
Influence of the Carbon Concentration on (p) Poly-SiC<sub>x</sub> Layer Properties With Focus on Parasitic Absorption in Front Side Poly-SiC<sub>x</sub>/SiO<sub>x</sub> Passivating Contacts of Solar Cells
Etch Pit Density Reduction in POCl<sub>3</sub> and APCVD Gettered mc‐Si
Investigation on the Long-Term Stability of AlO<sub>x</sub>/SiN<sub>y</sub>:H and SiN<sub>y</sub>:H Passivation Layers During Illuminated Annealing at Elevated Temperatures
Passivation of Si wafers by Al2O3 films with different surface conditioning
Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiO<sub>x</sub> passivating contacts
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
RF-Sputtered Ti-Based Dielectric Layers as Al-Diffusion Barrier for Passivating Contacts
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Compensation of the sputter damage during a-Si deposition for poly-Si/SiO<sub>x</sub> passivating contacts by ex-situ p-doping
Charge carrier transport mechanism through different oxides for (n) poly-Si/SiO<sub>x</sub> fired passivating contacts
Enhanced oxidation of thermally grown SiO<sub>2</sub> due to P-precipitates
Influence of rear side coating on emitter formation during POCL<sub>3</sub> diffusion process
Influence of the Carbon Concentration on (p) Poly-SiC<sub>x</sub> Layer Properties With Focus on Parasitic Absorption in Front Side Poly-SiC<sub>x</sub>/SiO<sub>x</sub> Passivating Contacts of Solar Cells
Etch Pit Density Reduction in POCl<sub>3</sub> and APCVD Gettered mc‐Si
Investigation on the Long-Term Stability of AlO<sub>x</sub>/SiN<sub>y</sub>:H and SiN<sub>y</sub>:H Passivation Layers During Illuminated Annealing at Elevated Temperatures
Passivation of Si wafers by Al2O3 films with different surface conditioning
Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiO<sub>x</sub> passivating contacts
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
RF-Sputtered Ti-Based Dielectric Layers as Al-Diffusion Barrier for Passivating Contacts
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Compensation of the sputter damage during a-Si deposition for poly-Si/SiO<sub>x</sub> passivating contacts by ex-situ p-doping
Charge carrier transport mechanism through different oxides for (n) poly-Si/SiO<sub>x</sub> fired passivating contacts
Enhanced oxidation of thermally grown SiO<sub>2</sub> due to P-precipitates
Influence of rear side coating on emitter formation during POCL<sub>3</sub> diffusion process
Influence of the Carbon Concentration on (p) Poly-SiC<sub>x</sub> Layer Properties With Focus on Parasitic Absorption in Front Side Poly-SiC<sub>x</sub>/SiO<sub>x</sub> Passivating Contacts of Solar Cells
Etch Pit Density Reduction in POCl<sub>3</sub> and APCVD Gettered mc‐Si
Investigation on the Long-Term Stability of AlO<sub>x</sub>/SiN<sub>y</sub>:H and SiN<sub>y</sub>:H Passivation Layers During Illuminated Annealing at Elevated Temperatures
Passivation of Si wafers by Al2O3 films with different surface conditioning
Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiO<sub>x</sub> passivating contacts
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells