Compensation of the sputter damage during a-Si deposition for poly-Si/SiO<sub>x</sub> passivating contacts by ex-situ p-doping
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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In: SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium / Poortmans, Jef et al. (Hrsg.). - Melville, New York : AIP Publishing, 2019. - (AIP Conference Proceedings ; 2147,1). - 040018. - eISSN 0094-243X. - ISBN 978-0-7354-1892-9
In: SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics, 8. Apr 2019 - 10. Apr 2019, Leuven, Belgium
- Event
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Veröffentlichung
- (where)
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Konstanz
- (who)
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KOPS Universität Konstanz
- (when)
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2019
- Creator
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Steffens, Jonathan
Rinder, Johannes
Hahn, Giso
Terheiden, Barbara
- URN
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urn:nbn:de:bsz:352-2-bob4o9m1wvff3
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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25.03.2025, 1:44 PM CET
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Steffens, Jonathan
- Rinder, Johannes
- Hahn, Giso
- Terheiden, Barbara
- KOPS Universität Konstanz
Time of origin
- 2019
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Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Influence of the Carbon Concentration on (p) Poly-SiC<sub>x</sub> Layer Properties With Focus on Parasitic Absorption in Front Side Poly-SiC<sub>x</sub>/SiO<sub>x</sub> Passivating Contacts of Solar Cells
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
On the characteristics of the doping profile under local metal contacts
Enhanced oxidation of thermally grown SiO<sub>2</sub> due to P-precipitates
Influence of firing temperature on APCVD poly-Si properties for fired passivating contacts
Passivation of Si wafers by Al2O3 films with different surface conditioning
Silver Metallization with Controlled Etch Stop Using SiO<sub>x</sub> Layers in Passivating Contacts for Improved Silicon Solar Cell Performance
Investigation of Contact Resistivities on APCVD (p) Poly-Si for Fired Passivating Contacts
P+ Doping Analysis of Laser Fired Contacts by Raman Spectroscopy
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells
CVD Boron Containing Glasses - An Attractive Alternative Diffusion Source for High Quality Emitters and Simplified Processing : A Review
Role of thermal SiO<sub>2</sub> on passivation of highly doped layer
Influence of the Carbon Concentration on (p) Poly-SiC<sub>x</sub> Layer Properties With Focus on Parasitic Absorption in Front Side Poly-SiC<sub>x</sub>/SiO<sub>x</sub> Passivating Contacts of Solar Cells
Entwicklung und Charakterisierung neuartiger Hochleistungssolarzellen
On the characteristics of the doping profile under local metal contacts
Enhanced oxidation of thermally grown SiO<sub>2</sub> due to P-precipitates
Influence of firing temperature on APCVD poly-Si properties for fired passivating contacts
Passivation of Si wafers by Al2O3 films with different surface conditioning
Silver Metallization with Controlled Etch Stop Using SiO<sub>x</sub> Layers in Passivating Contacts for Improved Silicon Solar Cell Performance
Investigation of Contact Resistivities on APCVD (p) Poly-Si for Fired Passivating Contacts
P+ Doping Analysis of Laser Fired Contacts by Raman Spectroscopy
Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells