Chemical Interpretation of Charged Point Defects in Semiconductors: A Case Study of Mg 2 Si
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Chemical Interpretation of Charged Point Defects in Semiconductors: A Case Study of Mg 2 Si ; day:08 ; month:07 ; year:2022 ; extent:1
ChemNanoMat ; (08.07.2022) (gesamt 1)
- Creator
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Toriyama, Michael Y.
Brod, Madison K.
Snyder, G. Jeffrey
- DOI
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10.1002/cnma.202200222
- URN
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urn:nbn:de:101:1-2022070915063608972535
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:32 AM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Toriyama, Michael Y.
- Brod, Madison K.
- Snyder, G. Jeffrey
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