Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors

to related objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 1556-276X

Extent: Online-Ressource

Language: Englisch

Notes: online resource.

Bibliographic citation: Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors ; volume:11 ; number:1 ; day:23 ; month:8 ; year:2016 ; pages:1-6 ; date:12.2016
Nanoscale research letters ; 11, Heft 1 (23.8.2016), 1-6, 12.2016

Creator: Lv, Y. J.

Contributor: Song, X. B.
Wang, Y. G.
Fang, Y. L.
Feng, Z. H.
SpringerLink (Online service)

DOI: 10.1186/s11671-016-1591-6

URN: urn:nbn:de:1111-2016092017686

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:56 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Show original at data provider

Associated

Lv, Y. J.
Song, X. B.
Wang, Y. G.
Fang, Y. L.
Feng, Z. H.
SpringerLink (Online service)

Other Objects (12)

Hest al'n Wiehnachtsboom?

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

Hochschulschrift

Untersuchungen zur Mikrostruktur in AlN

AlN vs. AlScN in Magnetoelectric Sensors

Hochschulschrift

AlN base layers for UV LEDs

Berkovich Nanoindentation on AlN Thin Films

Extended defects in PVT-grown AlN

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Hest al'n Wiehnachtsboom?

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

Hochschulschrift

Untersuchungen zur Mikrostruktur in AlN

AlN vs. AlScN in Magnetoelectric Sensors

Hochschulschrift

AlN base layers for UV LEDs

Berkovich Nanoindentation on AlN Thin Films

Extended defects in PVT-grown AlN

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Hest al'n Wiehnachtsboom?

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

Hochschulschrift

Untersuchungen zur Mikrostruktur in AlN

AlN vs. AlScN in Magnetoelectric Sensors

Hochschulschrift

AlN base layers for UV LEDs

Berkovich Nanoindentation on AlN Thin Films

Extended defects in PVT-grown AlN

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Cultural heritage institutions wishing to register will find more information here.

Fields marked * need to be filled in.

Username*

Please enter your username

Email*

Please enter your email address

Please do not fill this field

First name

Last name

Password*

Please enter your password

Confirm password*

Please enter the same password

I have read the terms of use and the privacy policy for the collection of personal data and accept them. *

This field is required.

I would like to subscribe to the newsletter of the Deutsche Digitale Bibliothek. See newsletter subscription info.

Account created

Your "My DDB" account has been successfully created. Before you can log in to your account, you must click the confirmation link in the message we just sent to the email address you provided.

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors

Object Details

References and Relationships

Contributors, Places and Time

Further information

Data provider

Associated

Other Objects (12)

Hest al'n Wiehnachtsboom?

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

Untersuchungen zur Mikrostruktur in AlN

AlN vs. AlScN in Magnetoelectric Sensors

AlN base layers for UV LEDs

AlN base layers for UV LEDs

Berkovich Nanoindentation on AlN Thin Films

Extended defects in PVT-grown AlN

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Hest al'n Wiehnachtsboom?

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

Untersuchungen zur Mikrostruktur in AlN

AlN vs. AlScN in Magnetoelectric Sensors

AlN base layers for UV LEDs

AlN base layers for UV LEDs

Berkovich Nanoindentation on AlN Thin Films

Extended defects in PVT-grown AlN

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Hest al'n Wiehnachtsboom?

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

Untersuchungen zur Mikrostruktur in AlN

AlN vs. AlScN in Magnetoelectric Sensors

AlN base layers for UV LEDs

AlN base layers for UV LEDs

Berkovich Nanoindentation on AlN Thin Films

Extended defects in PVT-grown AlN

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Related objects

Reset password