Electrons and holes in InSb under crossed magnetic and stress fields. 1, Theory
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: Physical review, B 37 (1988), S. 10249-10255. URL http://dx.doi.org/10.1103/PhysRevB.37.10264
- Klassifikation
-
Physik
- Schlagwort
-
Halbleiter ; Magnetfeld ; Valenzband
- Ereignis
-
Veröffentlichung
- (wo)
-
Stuttgart
- (wer)
-
Universitätsbibliothek der Universität Stuttgart
- (wann)
-
2016
- Beteiligte Personen und Organisationen
- URN
-
urn:nbn:de:bsz:93-opus-104820
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:54 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Trebin, Hans-Rainer
- Wolfstädter, Bernd
- Pascher, Harald
- Häfele, Hans-Georg
- Universitätsbibliothek der Universität Stuttgart
Entstanden
- 2016
Ähnliche Objekte (12)
Electrons and holes in InSb under crossed magnetic and stress fields. 3, Magnetoreflection
Electrons and holes in InSb under crossed magnetic and stress fields. 2, Recombination radiation
Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands
Hard and soft electrons and holes
Transitions of electrons and holes drive diffusion in crystals, glasses and melts
Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe
Measurements of the drift velocities of electrons and holes in high-ohmic <100> silicon
Atoms, electrons, and rays
Molecules, Electrons and Biology
Electrons and the Vacuum
CROSSED
Interacting electrons and quantum magnetism
Electrons and holes in InSb under crossed magnetic and stress fields. 3, Magnetoreflection
Electrons and holes in InSb under crossed magnetic and stress fields. 2, Recombination radiation
Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands
Hard and soft electrons and holes
Transitions of electrons and holes drive diffusion in crystals, glasses and melts
Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe
Measurements of the drift velocities of electrons and holes in high-ohmic <100> silicon
Atoms, electrons, and rays
Molecules, Electrons and Biology
Electrons and the Vacuum
CROSSED
Interacting electrons and quantum magnetism
Electrons and holes in InSb under crossed magnetic and stress fields. 3, Magnetoreflection
Electrons and holes in InSb under crossed magnetic and stress fields. 2, Recombination radiation
Electrons and holes in InSb under crossed magnetic and stress fields. 4, Stimulated Raman scattering in the valence bands
Hard and soft electrons and holes
Transitions of electrons and holes drive diffusion in crystals, glasses and melts
Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe
Measurements of the drift velocities of electrons and holes in high-ohmic <100> silicon
Atoms, electrons, and rays
Molecules, Electrons and Biology
Electrons and the Vacuum
CROSSED